Optimizing Si-Based DG-JL-TFET Performance through Tunable Work Function Engineering

The optimization of silicon-based Double-Gate-Junction less-Tunnel-Field-Effect-Transistors (DG-JL-TFETs) represents advancement in semiconductor technology. This research investigates the influence of tunable-Work-Function(WF) engineering to improving the performance and adaptability of the device. The SS (Subthreshold Swing) can be enhanced and to reduces the leakage current. By changing the WF of the gate material, which in turn modulates the electrostatic control over the channel. The research utilizes exhaustive simulations to investigate the impact of various WF for both gates and it has critical values on device parameters, they are <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_{t})$</tex> is 0.4 V, the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(I_{on})$</tex> is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$5.7\mu \mathrm{A}$</tex>, and the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(f_{t})$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(f_{max})$</tex> is 156 GHz and 302 GHz, respectively. The results of this study suggest that the strategic tuning of the gate WF can result in a significant increase in the On-Off-current ratio and decrease the power consumption. DG-JL-TFETs to be more appropriate for high-performance and low-power applications.