Real-Time SER Measurements of CMOS Bulk 40- and 65-nm SRAMs Combined With Neutron Spectrometry at the JET Tokamak During Its Final D-T Plasma Operation

We performed soft error rate (SER) characterization of 40- and 65-nm bulk CMOS static random access memories (SRAMs) combined with neutron spectrometry in the deuterium-tritium (D-T)-fueled Joint European Torus (JET) tokamak during its final D-T plasma operation (September and October 2023) producing a series of several dozens of power pulses. Our experimental results demonstrate the impact of machine operation on the electronics’ reliability, emulating realistic conditions for circuits exposed to the partially radiation-shielded environment of future fusion reactors. Typical bit-flip (BF) rates of 493 h<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{-1} \cdot $ </tex-math></inline-formula>Gbit−1 for 65-nm SRAMs and 2342 h<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{-1} \cdot $ </tex-math></inline-formula>Gbit−1 for 40-nm SRAMs were measured for a residual machine-induced neutron flux of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim 3.15\times 10^{5}$ </tex-math></inline-formula> cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{-2} \cdot $ </tex-math></inline-formula>s−1 below the reinforced concrete slab (thickness of 1045 mm) supporting the tokamak chamber. To complete this characterization work, a general methodology for the SER prediction in such a mixed-field D-T neutron radiation environment composed of both thermal and fast neutrons (FN) (up to 14 MeV) is presented and validated from this ensemble of experimental data for the two SRAM technologies. Finally, the interest in this approach for future tokamaks and high-energy physics accelerators is discussed.

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Journal
IEEE Transactions on Nuclear Science
Published
2025-02-13
DOI
https://doi.org/10.1109/tns.2025.3540345
Citations
2
Primary Topic
Integrated Circuits and Semiconductor Failure Analysis
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article
Field-Weighted Citation Impact
1.46

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article

Real-Time SER Measurements of CMOS Bulk 40- and 65-nm SRAMs Combined With Neutron Spectrometry at the JET Tokamak During Its Final D-T Plasma Operation

Daniela Munteanu, P. Moreau, X. Litaudon, J. Bucalossi et al.
2 citations
IEEE Transactions on Nuclear Science
Integrated Circuits and Semiconductor Failure Analysis
1.46
article

Real-Time SER Measurements of CMOS Bulk 40- and 65-nm SRAMs Combined With Neutron Spectrometry at the JET Tokamak During Its Final D-T Plasma Operation

Daniela Munteanu, P. Moreau, X. Litaudon, J. Bucalossi, Victor Malherbe, Jean‐Luc Autran, Matteo Cecchetto, Dario Rastelli, Rubén García Alía, M. Dentan, S. Moindjie, R. Naish, Alan Horton, J. Waterhouse, Philippe Roché
article en
2 citations

Abstract

We performed soft error rate (SER) characterization of 40- and 65-nm bulk CMOS static random access memories (SRAMs) combined with neutron spectrometry in the deuterium-tritium (D-T)-fueled Joint European Torus (JET) tokamak during its final D-T plasma operation (September and October 2023) producing a series of several dozens of power pulses. Our experimental results demonstrate the impact of machine operation on the electronics’ reliability, emulating realistic conditions for circuits exposed to the partially radiation-shielded environment of future fusion reactors. Typical bit-flip (BF) rates of 493 h<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{-1} \cdot $ </tex-math></inline-formula>Gbit−1 for 65-nm SRAMs and 2342 h<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{-1} \cdot $ </tex-math></inline-formula>Gbit−1 for 40-nm SRAMs were measured for a residual machine-induced neutron flux of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim 3.15\times 10^{5}$ </tex-math></inline-formula> cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{-2} \cdot $ </tex-math></inline-formula>s−1 below the reinforced concrete slab (thickness of 1045 mm) supporting the tokamak chamber. To complete this characterization work, a general methodology for the SER prediction in such a mixed-field D-T neutron radiation environment composed of both thermal and fast neutrons (FN) (up to 14 MeV) is presented and validated from this ensemble of experimental data for the two SRAM technologies. Finally, the interest in this approach for future tokamaks and high-energy physics accelerators is discussed.

IEEE Transactions on Nuclear ScienceVol. 72(4)
Centre National de la Recherche Scientifique (FR), Piaggio (Italy) (IT), Aix-Marseille Université (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Cargill (Canada) (CA), Culham Science Centre (GB), STMicroelectronics (France) (FR), CEA Cadarache (FR), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (FR), United Kingdom Atomic Energy Authority (GB), European Organization for Nuclear Research (CH)
EUROfusion, European Commission, Euratom Research and Training Programme
Affordable and clean energy
Openalex Percentile: Top 19%
Integrated Circuits and Semiconductor Failure Analysis
1.46
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