Demonstration of High Transconductance Gate-All-Around Transistors Using Negative Capacitance ‘Super High-K’ Gate Stack

We demonstrate a gate all around (GAA) negative capacitance FET (NCFET). The device provides an equivalent oxide thickness (EOT) of 6.5Å with unscavenged SiO2 interlayer (IL), and a high transconductance of 2.15 mS/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m for L<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${_{\text {eff}}} =45$ </tex-math></inline-formula> nm, matching and exceeding what has been reported for MOSFETs with much shorter gate lengths and similar gate stack thickness. Our results demonstrate feasibility of negative capacitance gate stack in a GAA geometry for enhanced gate control, scaling, and performance.