A 64 Gbaud/s Hybrid-Integrated Optical Transmitter Based on a 60 GHz Silicon Photonic Dual-Segment Microring Modulator and a CMOS Driver for High-Bandwidth DWDM Optical I/O

Silicon microring modulators (MRMs) are pivotal for enabling high-bandwidth, power-efficient dense wavelength division multiplexing (DWDM) optical I/O. This paper introduces a dual-segment MRM featuring four N-type and four P-type doping concentrations. By optimizing the doping profiles, the MRM achieves a 43% reduction in loss and a 10% reduction in capacitance, while maintaining comparable modulation efficiency to MRMs with three N-type and three P-type doping concentrations. This design achieves an electro-optic (EO) bandwidth exceeding 60 GHz, marking a 15% increase over its single-segment counterpart. An equivalent circuit model, which aligns excellently with experimental results, demonstrates the co-design capability of electronic and photonic integrated circuits (EPIC). The dual-segment MRM exhibits comparable modulation efficiency to the single-segment MRM, with a measurement of approximately 0.63 V<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\cdot$</tex-math></inline-formula> cm. Both modulators operate successfully at data rates of 106 Gb/s using PAM4. With the ample EO bandwidth, a data rate of 128 Gbaud/s using NRZ is also demonstrated for the dual-segment MRM. For the first time, a 64 Gbaud/s hybrid integrated dual-segment MRM transmitter (TX) is demonstrated, employing a segmented driver with a feed forward equalization (FFE) circuit. This TX is paired with a co-designed 28 nm complementary metal oxide semiconductor (CMOS) driver for DWDM optical I/O, showcasing high bandwidth density and power efficiency.

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Publication Details

Journal
Journal of Lightwave Technology
Published
2025-02-13
DOI
https://doi.org/10.1109/jlt.2025.3541679
Citations
5
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
3.65

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article

A 64 Gbaud/s Hybrid-Integrated Optical Transmitter Based on a 60 GHz Silicon Photonic Dual-Segment Microring Modulator and a CMOS Driver for High-Bandwidth DWDM Optical I/O

Siyuan Ma, Jintao Xue, Wenfu Zhang, Shenlei Bao et al.
5 citations
Journal of Lightwave Technology
Photonic and Optical Devices
3.65
article

A 64 Gbaud/s Hybrid-Integrated Optical Transmitter Based on a 60 GHz Silicon Photonic Dual-Segment Microring Modulator and a CMOS Driver for High-Bandwidth DWDM Optical I/O

Siyuan Ma, Jintao Xue, Wenfu Zhang, Shenlei Bao, N. D. Qi, Chao Cheng, Binhao Wang, Qianli Ma
article en
5 citations

Abstract

Silicon microring modulators (MRMs) are pivotal for enabling high-bandwidth, power-efficient dense wavelength division multiplexing (DWDM) optical I/O. This paper introduces a dual-segment MRM featuring four N-type and four P-type doping concentrations. By optimizing the doping profiles, the MRM achieves a 43% reduction in loss and a 10% reduction in capacitance, while maintaining comparable modulation efficiency to MRMs with three N-type and three P-type doping concentrations. This design achieves an electro-optic (EO) bandwidth exceeding 60 GHz, marking a 15% increase over its single-segment counterpart. An equivalent circuit model, which aligns excellently with experimental results, demonstrates the co-design capability of electronic and photonic integrated circuits (EPIC). The dual-segment MRM exhibits comparable modulation efficiency to the single-segment MRM, with a measurement of approximately 0.63 V<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\cdot$</tex-math></inline-formula> cm. Both modulators operate successfully at data rates of 106 Gb/s using PAM4. With the ample EO bandwidth, a data rate of 128 Gbaud/s using NRZ is also demonstrated for the dual-segment MRM. For the first time, a 64 Gbaud/s hybrid integrated dual-segment MRM transmitter (TX) is demonstrated, employing a segmented driver with a feed forward equalization (FFE) circuit. This TX is paired with a co-designed 28 nm complementary metal oxide semiconductor (CMOS) driver for DWDM optical I/O, showcasing high bandwidth density and power efficiency.

Journal of Lightwave TechnologyVol. 43(10)
Chinese Academy of Sciences (CN), Xi'an Institute of Optics and Precision Mechanics (CN), Institute of Semiconductors (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 8%
Photonic and Optical Devices
3.65
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