A Dual-Mode CMOS VCO Using Hybridized Localized Surface Plasmon Resonator

An on-chip mode-switchable hybridized localized surface plasmon resonator (HLSPR) is proposed to realize a dual-mode voltage-controlled oscillator (VCO). Different from conventional localized surface plasmon resonator (LSPR) with limited available modes, the proposed HLSPR offers rich intrinsic resonate modes, which can enlarge the tuning ranges or frequency bands of the VCO. A switch is applied to the slit of the HLSPR to electrically control resonate modes and frequencies. Moreover, capacitors paralleled to the HLSPR can naturally avoid mode ambiguity. The HLSPR-based dual-mode VCO is prototyped in a 180-nm CMOS process. By integrating HLSPR with active circuits, the K-band VCO achieves a phase noise (PN) of -109.5 dBc/Hz @ 1-MHz offset.

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Publication Details

Journal
IEEE Microwave and Wireless Technology Letters
Published
2025-02-13
DOI
https://doi.org/10.1109/lmwt.2025.3535757
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

A Dual-Mode CMOS VCO Using Hybridized Localized Surface Plasmon Resonator

Yizhu Shen, Guoqing Dong, Sanming Hu, Shuyang Zhang
IEEE Microwave and Wireless Technology Letters
Photonic and Optical Devices
article

A Dual-Mode CMOS VCO Using Hybridized Localized Surface Plasmon Resonator

Yizhu Shen, Guoqing Dong, Sanming Hu, Shuyang Zhang
article en

Abstract

An on-chip mode-switchable hybridized localized surface plasmon resonator (HLSPR) is proposed to realize a dual-mode voltage-controlled oscillator (VCO). Different from conventional localized surface plasmon resonator (LSPR) with limited available modes, the proposed HLSPR offers rich intrinsic resonate modes, which can enlarge the tuning ranges or frequency bands of the VCO. A switch is applied to the slit of the HLSPR to electrically control resonate modes and frequencies. Moreover, capacitors paralleled to the HLSPR can naturally avoid mode ambiguity. The HLSPR-based dual-mode VCO is prototyped in a 180-nm CMOS process. By integrating HLSPR with active circuits, the K-band VCO achieves a phase noise (PN) of -109.5 dBc/Hz @ 1-MHz offset.

IEEE Microwave and Wireless Technology LettersVol. 35(4)
State Key Laboratory of Millimeter Waves, Southeast University (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 98%
Photonic and Optical Devices
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A Dual-Mode CMOS VCO Using Hybridized Localized Surface Plasmon Resonator — Yizhu Shen, Guoqing Dong, et al. · IEEE Microwave and Wireless Technology Letters (2025) | TGRS Research Map | TGRS