Anomalous Magnetization in a van der Waals Antiferromagnet/Ferromagnet CrCl<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub>/CrCl<sub>3</sub> Heterostructure

Manipulating and designing the interfaces between two-dimensional (2D) van der Waals materials serves as a fundamental approach for achieving technologically significant effects and tailoring material characteristics. The exchange bias effect exhibited in 2D van der Waals magnetic heterostructures has garnered significant attention in the realm of spintronics research owing to its intriguing physics and promising prospects for practical applications. Herein, we have, for the first time, constructed the CrCl3/Fe3GeTe2/CrCl3 heterostructure and employed the anomalous Hall method to precisely measure its unique characteristics. Interestingly, distinct double-shifted hysteresis loops observed in the anomalous Hall effect curve are attributed to the emergence of multiple domains within the Fe3GeTe2 layer induced by the CrCl3/Fe3GeTe2 interfaces. In contrast to the pure Fe3GeTe2 few-layer structures, the CrCl3/Fe3GeTe2/CrCl3 heterostructure demonstrates the presence of an exchange bias effect. As the temperature increases, the values of the exchange bias field decrease and ultimately vanish at 11 K, near the Néel temperature of CrCl3. Concurrently, the width of the hysteresis loop diminishes and disappears above 150 K. These findings suggest that the pinning effect and exchange bias effect are not present simultaneously, and the pinning effect has a temperature range wider than that of the exchange bias effect. Our findings underscore the potential of antiferromagnet–ferromagnet coupling interfaces as a powerful means for manipulating magnetic properties, with implications for both advanced spintronic device design and fundamental understanding of magnetic interactions.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2025-02-13
DOI
https://doi.org/10.1021/acsaelm.4c02156
Citations
2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.04

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article

Anomalous Magnetization in a van der Waals Antiferromagnet/Ferromagnet CrCl3/Fe3GeTe2/CrCl3 Heterostructure

Chenguo Hu, Lihui Bai, Bingbing Lyu, Jinwei Rao et al.
2 citations
ACS Applied Electronic Materials
2D Materials and Applications
1.04
article

Anomalous Magnetization in a van der Waals Antiferromagnet/Ferromagnet CrCl3/Fe3GeTe2/CrCl3 Heterostructure

Chenguo Hu, Lihui Bai, Bingbing Lyu, Jinwei Rao, Jianshu Xue, Yilin Wang, Shishen Yan, Ran Tian, Yitong Sun
article en
2 citations

Abstract

Manipulating and designing the interfaces between two-dimensional (2D) van der Waals materials serves as a fundamental approach for achieving technologically significant effects and tailoring material characteristics. The exchange bias effect exhibited in 2D van der Waals magnetic heterostructures has garnered significant attention in the realm of spintronics research owing to its intriguing physics and promising prospects for practical applications. Herein, we have, for the first time, constructed the CrCl3/Fe3GeTe2/CrCl3 heterostructure and employed the anomalous Hall method to precisely measure its unique characteristics. Interestingly, distinct double-shifted hysteresis loops observed in the anomalous Hall effect curve are attributed to the emergence of multiple domains within the Fe3GeTe2 layer induced by the CrCl3/Fe3GeTe2 interfaces. In contrast to the pure Fe3GeTe2 few-layer structures, the CrCl3/Fe3GeTe2/CrCl3 heterostructure demonstrates the presence of an exchange bias effect. As the temperature increases, the values of the exchange bias field decrease and ultimately vanish at 11 K, near the Néel temperature of CrCl3. Concurrently, the width of the hysteresis loop diminishes and disappears above 150 K. These findings suggest that the pinning effect and exchange bias effect are not present simultaneously, and the pinning effect has a temperature range wider than that of the exchange bias effect. Our findings underscore the potential of antiferromagnet–ferromagnet coupling interfaces as a powerful means for manipulating magnetic properties, with implications for both advanced spintronic device design and fundamental understanding of magnetic interactions.

ACS Applied Electronic MaterialsVol. 7(4)
Shandong University (CN), State Key Laboratory of Crystal Materials
Shandong University, National Natural Science Foundation of China, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 28%
2D Materials and Applications
1.04
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