Quasi-Z-Source Inverters for High Voltage Gain Ratio Scenarios

Due to the limitations of the conventional qZSI in terms of boost capability, capacitor voltage stress, and input inductor current ripple, this paper proposes a novel high-gain qZSI with a unique boost structure instead of the boost inductor used in the original quasi-Z source topology. This new high-gain qZSI not only exhibits enhanced DC-side boosting capabilities compared to the previously proposed qZSI topology but also mitigates capacitive voltage stress while reducing input inductor current ripple. Consequently, it significantly diminishes the rate of input inductor current ripple and thereby improves both output waveform quality and system stability. The theoretical analysis along with simulation and experimental results validate the feasibility and superiority of this new high-gain qZSI topology.