Investigation into the equivalent circuit parameters of semiconductor switches utilized in gas lasers

Pulse power sources based on semiconductor switching devices offer the advantages of controllable pulse parameters, miniaturization, and high reliability, making them a research hotspot with rapid development in recent years. This paper investigates the equivalent circuit parameters of semiconductor switches used in gas lasers, simulating the impact of loop inductance, switch equivalent inductance, switch equivalent capacitance, and switch equivalent resistance on the current output waveform. The findings indicate that when the loop inductance is in the range of 1 μH, the switch equivalent inductance is between 1 μH and 100 nH, the switch equivalent capacitance is around 100 nF, and the switch equivalent resistance is approximately 100 mΩ, the equivalent circuit produces a current waveform with a fast-rising edge, high amplitude, and minimal jitter. Establishing these equivalent circuit parameters enhances the modular integration of gas lasers and provides a technical foundation for their miniaturization and lightweight applications.