Research on the enhancement of semiconductor processing efficiency by the energy ratio of femto/nano-second dual beam

In recent years, the broad applicability, non-contact nature, high precision, and low energy consumption of laser processing have made its application increasingly widespread in fields such as aerospace, medical, and electronic consumer products. Femtosecond and nanosecond lasers are representatives of high quality and high efficiency, respectively. This article takes semiconductor silicon as the research object, and carries out experiments to enhance processing efficiency under different delays and different energy ratios through the combined technical path of femtosecond and nanosecond lasers. Combined with the measurement results of the material’s three-dimensional morphology, the ablation area and roughness are used as criteria to study the impact of delay and energy ratio on the enhancement effect. The experimental results show that for semiconductor silicon, the enhancement phenomenon occurs at positive delays, and effective enhancement will only occur when the femtosecond energy density exceeds the damage threshold. As the femtosecond laser intensity increases from 0.5F_th-to 25F_th-, the enhancement effect becomes more significant.