High-performance MoTe2 photodetector integrated with thin-film lithium niobate ridge waveguides

High-responsivity photodetectors are crucial for enabling multifunctional thin -film lithium niobate photonic integrated chips. This work demonstrates a highly sensitive photodetector fabricated by using MoTe₂, integrated with a thin-film lithium niobate ridge waveguide. The device demonstrates excellent photoresponsivity in the wavelength of infrared light region, achieving 1.61 A/W at 1310 nm and 15.37 mA/W at 1550 nm. It also has an extremely low dark current, measuring 8 nA at a bias voltage of 1 V.