Coherent emission of antimonide semiconductor laser arrays with a phase-locked Talbot cavity

We demonstrate a phase-locked antimonide laser array with an integrated monolithic Talbot cavity. Both simulations and experimental results confirm effective mode discrimination. Arrays with 15 and 23 elements were designed and fabricated, delivering the maximum powers of 0.80 W and 1.14 W under continuous-wave operation, respectively. Furthermore, the devices exhibit a far-field pattern with a strong central main lobe from threshold current to full power current, indicating the preferential support of the in-phase coherent mode. The measured minimum full width at half-maximum of the central lobe is approximately 2°. The demonstrated stable mode selection capability, scalability, cost-effectiveness, and compatibility with conventional fabrication technologies highlight the significant potential for achieving higher output power and excellent beam quality, offering promising applications in mid-infrared laser systems.

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Publication Details

Journal
Optics Express
Published
2025-02-13
DOI
https://doi.org/10.1364/oe.555016
Citations
2
Primary Topic
Spectroscopy and Laser Applications
Type
article
Field-Weighted Citation Impact
1.51

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article

Coherent emission of antimonide semiconductor laser arrays with a phase-locked Talbot cavity

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2 citations
Optics Express
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article

Coherent emission of antimonide semiconductor laser arrays with a phase-locked Talbot cavity

Haoran Wen, Jianmei Shi, Yihang Chen, Chengao Yang, Jie Cao, Enquan Zhang, Haohai Yu, Yu Zhang, Zhiyuan Wang, Dongwei Jiang, Yingqiang Xu, Hao Tan, Haiqiao Ni, Zhengqi Geng, Zhichuan Niu
article en
2 citations

Abstract

We demonstrate a phase-locked antimonide laser array with an integrated monolithic Talbot cavity. Both simulations and experimental results confirm effective mode discrimination. Arrays with 15 and 23 elements were designed and fabricated, delivering the maximum powers of 0.80 W and 1.14 W under continuous-wave operation, respectively. Furthermore, the devices exhibit a far-field pattern with a strong central main lobe from threshold current to full power current, indicating the preferential support of the in-phase coherent mode. The measured minimum full width at half-maximum of the central lobe is approximately 2°. The demonstrated stable mode selection capability, scalability, cost-effectiveness, and compatibility with conventional fabrication technologies highlight the significant potential for achieving higher output power and excellent beam quality, offering promising applications in mid-infrared laser systems.

Optics ExpressVol. 33(4)
Hefei University (CN), Quantum (Australia) (AU), Institute of Semiconductors (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, Beijing Nova Program
Affordable and clean energy
Openalex Percentile: Top 21%
Spectroscopy and Laser Applications
1.51
DOIOpen Access PDFOpenAlex
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