Pressure-induced structural and superconducting transitions in black arsenic

We report high-pressure Raman spectra and resistance measurements of black arsenic (b-As) up to 58 GPa, along with phonon density of states and enthalpy calculations for four reported arsenic phases up to 50 GPa. It is found that metastable b-As transforms into gray arsenic (g-As) phase at a critical pressure of 1.51 GPa, followed by subsequent transitions to simple cubic arsenic (c-As) and incommensurate host-guest arsenic (hg-As) phases at 25.9 and 44.8 GPa, respectively. Superconductivity emerges above 25 GPa in the c-As phase, with the superconducting transition temperature (${T}_{c}$) remaining nearly a constant of 3 K. On further compression, ${T}_{c}$ steeply increases to a higher value around 4.5 K in the incommensurate hg-As phase above 43 GPa. We use our results to update the structural and superconducting phase diagrams under pressure for the novel semiconductor, black arsenic.

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2025-02-12
DOI
https://doi.org/10.1103/physrevb.111.064507
Citations
2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.04

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article

Pressure-induced structural and superconducting transitions in black arsenic

Shao‐Chu Huang, Ji Chen, Xu Zhang, Hugen Yan et al.
2 citations
Physical review. B./Physical review. B
2D Materials and Applications
1.04
article

Pressure-induced structural and superconducting transitions in black arsenic

Shao‐Chu Huang, Ji Chen, Xu Zhang, Hugen Yan, Siying Huang, Yalin Zhang, Lan Mu, Shiyan Li, Ya-Jie Wu, Kui Meng, Dongzhe Dai
article en
2 citations

Abstract

We report high-pressure Raman spectra and resistance measurements of black arsenic (b-As) up to 58 GPa, along with phonon density of states and enthalpy calculations for four reported arsenic phases up to 50 GPa. It is found that metastable b-As transforms into gray arsenic (g-As) phase at a critical pressure of 1.51 GPa, followed by subsequent transitions to simple cubic arsenic (c-As) and incommensurate host-guest arsenic (hg-As) phases at 25.9 and 44.8 GPa, respectively. Superconductivity emerges above 25 GPa in the c-As phase, with the superconducting transition temperature (${T}_{c}$) remaining nearly a constant of 3 K. On further compression, ${T}_{c}$ steeply increases to a higher value around 4.5 K in the incommensurate hg-As phase above 43 GPa. We use our results to update the structural and superconducting phase diagrams under pressure for the novel semiconductor, black arsenic.

Physical review. B./Physical review. BVol. 111(6)
Eastern Institute of Technology (NZ), Peking University (CN), Fudan University (CN), Hefei University (CN), Collaborative Innovation Center of Advanced Microstructures (CN)
National Natural Science Foundation of China, Chinese Academy of Sciences, Science and Technology Commission of Shanghai Municipality, National Key Research and Development Program of China
Climate action
Openalex Percentile: Top 28%
2D Materials and Applications
1.04
DOISourceOpenAlex
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