Electrical transport in the Hatsugai-Kohmoto model
The exactly solvable ``H-K'' family of interacting electron models introduced by Hatsugai and Kohmoto have played an important role in recent studies of the effect of wave function topology on the properties of correlation-driven (``Mott'') insulators. The authors show here that the very features that enable the exact solution lead to pathological transport properties including electrical conduction in the notionally insulating gapped Mott state and to divergent responses to applied magnetic fields. Caution is required in interpreting the results of the exact solutions.
Authors
- Giorgio Sangiovanni (ORCID: https://orcid.org/0000-0003-2218-2901)
- Michele Fabrizio (ORCID: https://orcid.org/0000-0002-2943-3278)
- Daniele Guerci (ORCID: https://orcid.org/0000-0003-2014-1735)
- Andrew J. Millis (ORCID: https://orcid.org/0000-0001-9413-6344)
Institutions
- Scuola Internazionale Superiore di Studi Avanzati (IT)
- University of Würzburg (DE)
- Flatiron Health (United States) (US)
- Flatiron Institute (US)
- Columbia University (US)
Publication Details
- Journal
- Physical review. B./Physical review. B
- Published
- 2025-02-12
- DOI
- https://doi.org/10.1103/physrevb.111.075124
- Citations
- 7
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 8.73
Funders
- National Science Foundation
- Simons Foundation
- Deutsche Forschungsgemeinschaft
- Kavli Institute for Theoretical Physics, University of California, Santa Barbara