Highly flexible TFT monolithic-integrated (Bi,Sb)2Se3 SWIR photodetector for wearable health monitoring and curved-surface imaging
Flexible short-wavelength infrared (SWIR) detectors are significant for wearable health monitoring, artificial vision systems, etc. However, it is difficult to realize flexibility in mainstream SWIR photodetectors, like InGaAs and HgCdTe, because of high fabrication temperature and epitaxial growth on single-crystal substrates. Herein, we report a highly flexible thin-film transistor (TFT) monolithic-integrated SWIR photodetector based on one-dimensional (Bi,Sb)<sub>2</sub>Se<sub>3</sub>. A high external quantum efficiency of 29% at 1,300 nm and fast response time are achieved. The device exhibits excellent flexibility due to the high mechanical tolerance of the one-dimensional structure, retaining 97% of the original value after bending at a 0.05 mm radius. It also presents high electric and thermal stability, maintaining 97.6% of the original value after annealing for 408 h at 90°C. Finally, applications for wearable heart rate monitors and curved-surface imaging are demonstrated. This work highlights the potential of (Bi,Sb)<sub>2</sub>Se<sub>3</sub> SWIR photodetector for flexible electronics.
Authors
- Kanghua Li (ORCID: https://orcid.org/0000-0002-2953-5936)
- Jiang Tang (ORCID: https://orcid.org/0000-0003-2574-2943)
- Chao Chen (ORCID: https://orcid.org/0000-0002-8706-5346)
- Shenglin Jiang
- Guangzu Zhang (ORCID: https://orcid.org/0000-0003-0659-4527)
- Zicheng Tang
- Chong Dong (ORCID: https://orcid.org/0000-0002-8142-7369)
- Haozhe Yang (ORCID: https://orcid.org/0000-0002-4095-2925)
- Jungang He (ORCID: https://orcid.org/0000-0002-3429-9392)
- Feifan Yang
- Ling Lin (ORCID: https://orcid.org/0000-0002-1963-2417)
- Xuke Yang
- Fu Li (ORCID: https://orcid.org/0009-0007-8226-1958)
- Ruisi Gao
Institutions
- Yangtze Optical Electronic (China) (CN)
- Wuhan National Laboratory for Optoelectronics (CN)
- Wuhan Institute of Technology (CN)
Publication Details
- Journal
- iScience
- Published
- 2025-02-12
- DOI
- https://doi.org/10.1016/j.isci.2025.112008
- Citations
- 4
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 2.92
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Hubei Province
- Wuhan National Laboratory for Optoelectronics
- National University's Basic Research Foundation of China
- National Key Research and Development Program of China