A 512 KBytes Highly Reliable and High-Speed Embedded NOR Flash Memory

With the increasing requirements for chip data storage capabilities in fields such as automotive electronics and the Internet of Things, Flash memory is becoming more and more widely used. This paper presents a 512 KBytes Flash memory array with high reliability, high-speed reading, and high noise immunity. By regarding one bit of the dual-bit NORD structure as a dummy bit, we simplify the operation mode and obtain a wider cell current window. Meanwhile, this paper minimized the influence of supply voltage fluctuation on the comparison between cell current and reference current through the optimization of the sense amplifier circuit. We tested whether this array depicts a high-endurance performance under 25 °C and 85 °C, as well as high-speed reading up to 18 ns. This enhanced Flash memory is expected to bring inspiration for achieving high reliability and endurance in the automotive field under harsh operating conditions.