Scintillation Properties of β-Ga2O3 Under the Excitation of Ultra-High-Charge Electron Bunches

The performance of ultrafast scintillators under ultrahigh dose rate is highly important for applications utilizing brilliant radiation sources. In this work, the scintillation properties of β-Ga2O3, a high-performance ultrafast wide-bandgap semiconductor scintillator, are systematically investigated under dose rates of 107 to 109 Gy/s for the first time by employing ultrashort high-charge electron bunches (bunch charge from 500 fC to 50 pC) generated from a superconducting radio-frequency accelerator. Our results show that in spite of the ultrahigh dose rate, the scintillation intensity was still linearly proportional to the electron bunch charge. Lifetime analysis reveals a fast decay component ranging from 3 to 4 ns, along with an average lifetime of 20 ns. These findings establish a solid foundation for the application of β-Ga2O3 as the scintillation material for high-charge electron sources such as laser-wakefield accelerated electrons.

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Publication Details

Journal
Photonics
Published
2025-02-12
DOI
https://doi.org/10.3390/photonics12020149
Citations
1
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.43

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Scintillation Properties of β-Ga2O3 Under the Excitation of Ultra-High-Charge Electron Bunches

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Scintillation Properties of β-Ga2O3 Under the Excitation of Ultra-High-Charge Electron Bunches

Jianming Xue, Tianqi Xu, Jun Xu, Chengyun Hua, Jianhan Sun, Yulan Liang, Pengying Wan, Qingfan Wu, Bo Liu, Wenjun Ma, Chang‐Feng Dai, Huili Tang, Juntao Liu, Senlin Huang, Huaqing Huang, Lin Lin, Hao Chen, Lin Huang, Chaoyi Zhang
article en
1 citations

Abstract

The performance of ultrafast scintillators under ultrahigh dose rate is highly important for applications utilizing brilliant radiation sources. In this work, the scintillation properties of β-Ga2O3, a high-performance ultrafast wide-bandgap semiconductor scintillator, are systematically investigated under dose rates of 107 to 109 Gy/s for the first time by employing ultrashort high-charge electron bunches (bunch charge from 500 fC to 50 pC) generated from a superconducting radio-frequency accelerator. Our results show that in spite of the ultrahigh dose rate, the scintillation intensity was still linearly proportional to the electron bunch charge. Lifetime analysis reveals a fast decay component ranging from 3 to 4 ns, along with an average lifetime of 20 ns. These findings establish a solid foundation for the application of β-Ga2O3 as the scintillation material for high-charge electron sources such as laser-wakefield accelerated electrons.

PhotonicsVol. 12(2)
Tongji University (CN), Peking University (CN), Northwest Institute of Nuclear Technology (CN), State Key Laboratory of Nuclear Physics and Technology, Xi'an Jiaotong University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China, National Science Fund for Distinguished Young Scholars
Openalex Percentile: Top 45%
Ga2O3 and related materials
0.43
DOIOpen Access PDFOpenAlex
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