Research on double-sided heat dissipation of PressPack IGBT based on thermal resistance composition

In this paper, the change of thermal resistance of press-pack Insulate-Gate Bipolar Transistor (IGBT) with doublesided heat dissipation before and after failure is studied. Based on the measurement principle of electrical method, the improved structure function method is used to process the measurement results, and a thermal resistance analysis method of double-sided heat dissipation structure is proposed. Through the results of finite element simulation, the change trend of thermal resistance of different side failures in the structural function curve is obtained, and it is verified in the power cycle experiment of press-pack IGBT. An extraction method of thermal resistance network based on asymmetric double-sided cooling (DSC) is proposed and applied to the study of thermal resistance failure of elastic press-pack IGBT, which provides a non-destructive means to determine the internal structure for analyzing the failure mechanism of the device.