TCAD modeling of 3D 4H-SiC MOSFET and simulation of heat distribution during power cycling

In this study, a viable solution of the modeling of a three-dimensional SiC MOSFET with flexible parameter settings was proposed. Based on the finite element simulation, a reliable simulation of power cycling was built using the Sentaurus TCAD. Considering the Hydrodynamic for carriers, the incomplete ionization model for the heavy doping and other factors, the optimizations on physical models and convergence are conducted. In particular, an adaptive method of meshing is achieved to endow the simulation with less solving time and more accuracy. The proposed method can provide the visualization of the heat distribution inside the device. The above results can be helpful for the analysis of device failure after power cycling, which can provide a basis for the development of the SiC MOSFETs.