Doping-dependent fixed charges in SiC/SiO<sub>2</sub> structure
Abstract Doping-dependent fixed charges were found in SiC/SiO 2 structures through a study on threshold voltage in both n- and p-channel SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with various body doping concentrations. Positive fixed charges increase for the p-body (n-channel) devices and negative fixed charges increase for the n-body (p-channel) devices, both of which retard the increase of threshold voltage in MOSFETs with increasing the body doping.
Authors
- Tsunenobu Kimoto (ORCID: https://orcid.org/0000-0002-6649-2090)
- Kyota Mikami (ORCID: https://orcid.org/0000-0002-1922-6064)
- Mitsuaki Kaneko (ORCID: https://orcid.org/0000-0001-5629-0105)
Institutions
- Kyoto University (JP)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2025-02-12
- DOI
- https://doi.org/10.35848/1882-0786/adb539
- Citations
- 5
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 3.65
Funders
- Japan Society for the Promotion of Science