Inkjet‐printed reconfigurable and recyclable memristors on paper

Abstract Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Building upon these attributes, their additive manufacturing on sustainable substrates further offers unique advantages for future electronics, including low environmental impact. Here, exploiting the structure–property relationship of inkjet‐printed MoS 2 nanoflake‐based resistive layer, we present paper‐based reconfigurable memristors. We demonstrate a sustainable process covering material exfoliation, device fabrication, and device recycling. With >90% yield from a 16 × 65 device array, our memristors demonstrate robust resistive switching, with >10 5 ON–OFF ratio and <0.5 V operation in non‐volatile state. Through modulation of compliance current, the devices transition into a volatile state, with only 50 pW switching power consumption. These performances rival state‐of‐the‐art metal oxide‐based counterparts. We show device recyclability and stable, reconfigurable operation following disassembly, material collection and re‐fabrication. We further demonstrate synaptic plasticity and neuronal leaky integrate‐and‐fire functionality, with disposable applications in smart packaging and simulated medical image diagnostics. Our work shows a sustainable pathway toward printable, reconfigurable neuromorphic devices, with minimal environmental footprints. image

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Institutions

Publication Details

Journal
InfoMat
Published
2025-02-12
DOI
https://doi.org/10.1002/inf2.70000
Citations
9
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
6.57

Funders

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article

Inkjet‐printed reconfigurable and recyclable memristors on paper

Jinrui Chen, Saptarsi Ghosh, Feng Tian, Nasiruddin Macadam et al.
9 citations
InfoMat
Advanced Memory and Neural Computing
6.57
article

Inkjet‐printed reconfigurable and recyclable memristors on paper

Jinrui Chen, Saptarsi Ghosh, Feng Tian, Nasiruddin Macadam, Guolin Yun, Simon M. Fairclough, Yang Xu, Rachel A. Oliver, Binghan Zhou, Tawfique Hasan, Zhuo Chen, Sibghah Khan, Mingfei Xiao, Zesheng Chen, Kasia Wilk, Georgios Psaltakis
article en
9 citations

Abstract

Abstract Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Building upon these attributes, their additive manufacturing on sustainable substrates further offers unique advantages for future electronics, including low environmental impact. Here, exploiting the structure–property relationship of inkjet‐printed MoS 2 nanoflake‐based resistive layer, we present paper‐based reconfigurable memristors. We demonstrate a sustainable process covering material exfoliation, device fabrication, and device recycling. With >90% yield from a 16 × 65 device array, our memristors demonstrate robust resistive switching, with >10 5 ON–OFF ratio and <0.5 V operation in non‐volatile state. Through modulation of compliance current, the devices transition into a volatile state, with only 50 pW switching power consumption. These performances rival state‐of‐the‐art metal oxide‐based counterparts. We show device recyclability and stable, reconfigurable operation following disassembly, material collection and re‐fabrication. We further demonstrate synaptic plasticity and neuronal leaky integrate‐and‐fire functionality, with disposable applications in smart packaging and simulated medical image diagnostics. Our work shows a sustainable pathway toward printable, reconfigurable neuromorphic devices, with minimal environmental footprints. image

InfoMatVol. 7(5)
University of Cambridge (GB), Zhejiang University (CN)
Royal Society, China Scholarship Council, Engineering and Physical Sciences Research Council
Openalex Percentile: Top 3%
Advanced Memory and Neural Computing
6.57
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