Experimental and first-principles investigations of electrical behaviors of CrB-based memristors

Abstract MBenes, as emerging two-dimensional transition metal borides, have garnered significant attention in nanomaterials, but their application in memristors remains largely unexplored. This study focuses on chromium boride (CrB) in memristor fields, examining its structure and properties through first-principles calculations and simulating Ag ion diffusion within CrB layers. We fabricated an Ag/CrB/TiN memristor, which exhibited stable resistive switching and durability beyond 100 cycles. Our findings confirm the potential of CrB in memristor technology and provide theoretical and experimental support for the future applications of MBenes.