Bi<sub>2</sub>WO<sub>6</sub> thin films grown by high-power InfraRed Nd:YAG pulsed laser deposition: a structural and spectroscopic study

Abstract We report on the epitaxial growth of Bi 2 WO 6 thin films by Pulsed Laser Deposition using a high-power infrared Nd:YAG laser source. X-ray diffraction investigation confirms that single (00 l )-oriented thin films can be obtained on both LSAT and SrTiO 3 substrates by using a LaNiO 3 adapting layer. Moreover, reciprocal space maps show that the films coherently grow on such substrates with the in-plane lattice parameters fully matching those of the substrates. In-situ x-ray photoemission spectroscopy experiments show that a UHV annealing process makes the film more conductive even though it also affects the Bi:W chemical ratio by reducing the Bi content. Alternately, the conductivity of the films can be effectively tuned by either growing the film in Ar atmosphere or by depositing potassium on its surface without modifying the Bi:W chemical ratio. Our results provide a viable route to synthesize high-quality Bi 2 WO 6 thin films with tailored electronic properties.

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Publication Details

Journal
Journal of Physics Materials
Published
2025-02-12
DOI
https://doi.org/10.1088/2515-7639/adb51b
Primary Topic
Gas Sensing Nanomaterials and Sensors
Type
article
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article

Bi2WO6 thin films grown by high-power InfraRed Nd:YAG pulsed laser deposition: a structural and spectroscopic study

Carolina Gutiérrez Bolaños, Maria Eugênia Fortes Brollo, Shyni Punathum Chalil, Jun Fujii et al.
Journal of Physics Materials
Gas Sensing Nanomaterials and Sensors
article

Bi2WO6 thin films grown by high-power InfraRed Nd:YAG pulsed laser deposition: a structural and spectroscopic study

Carolina Gutiérrez Bolaños, Maria Eugênia Fortes Brollo, Shyni Punathum Chalil, Jun Fujii, Sandeep Kumar Chaluvadi, A. Goldoni, Federico Mazzola, Regina Ciancio, I. Vobornik, P. Orgiani, Marco Caputo, Lorenzo Arici
article en

Abstract

Abstract We report on the epitaxial growth of Bi 2 WO 6 thin films by Pulsed Laser Deposition using a high-power infrared Nd:YAG laser source. X-ray diffraction investigation confirms that single (00 l )-oriented thin films can be obtained on both LSAT and SrTiO 3 substrates by using a LaNiO 3 adapting layer. Moreover, reciprocal space maps show that the films coherently grow on such substrates with the in-plane lattice parameters fully matching those of the substrates. In-situ x-ray photoemission spectroscopy experiments show that a UHV annealing process makes the film more conductive even though it also affects the Bi:W chemical ratio by reducing the Bi content. Alternately, the conductivity of the films can be effectively tuned by either growing the film in Ar atmosphere or by depositing potassium on its surface without modifying the Bi:W chemical ratio. Our results provide a viable route to synthesize high-quality Bi 2 WO 6 thin films with tailored electronic properties.

Journal of Physics MaterialsVol. 8(2)
The Abdus Salam International Centre for Theoretical Physics (ICTP) (IT), University of Trieste (IT), AREA Science Park (IT), Elettra-Sincrotrone Trieste S.C.p.A. (IT), Superconducting and other Innovative Materials and Devices Institute (IT), Istituto Officina dei Materiali (IT), MAX IV Laboratory (SE), Weizmann Institute of Science (IL)
Openalex Percentile: Top 98%
Gas Sensing Nanomaterials and Sensors
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