Characterization and reduction of RF loss up to 110 GHz by optimizing the UID-GaN layer in N-polar GaN material
In this work, the mechanism of RF loss up to 110 GHz for N-polar GaN has been studied. With the assistance of S-parameter characterization combined with secondary ion mass spectroscopy analyses, the incorporated oxygen impurity has been identified to be the main source bringing about the severe RF loss of N-polar GaN. The compensation of Fe-doping enables an effective reduction in RF loss. Moreover, the unintentionally doped (UID) GaN layer grown on top of the Fe-doped GaN buffer requires a careful design due to the distinct memory effect of Fe-doping in N-polar GaN. With an optimization of its thickness, a very low RF loss of 0.36 dB/mm at 94 GHz has been attained. Furthermore, by fitting the Fe concentration profile of UID-GaN according to the mass balance rate equation, it is found that the desorption of Fe on the N-polar GaN surface is significant. A bond-based model is introduced to elucidate the difference of the Fe memory effect between Ga-polar and N-polar GaN.
Authors
- Sheng Cheng (ORCID: https://orcid.org/0000-0003-4207-4086)
- Xiaoning Zhan (ORCID: https://orcid.org/0000-0002-8259-250X)
- Yu Zhou (ORCID: https://orcid.org/0000-0001-7968-3323)
- Qingru Wang (ORCID: https://orcid.org/0009-0009-3754-7855)
- X.Y. Zhang (ORCID: https://orcid.org/0000-0001-6759-8308)
- Qian Sun (ORCID: https://orcid.org/0000-0001-5495-2232)
- Qian Li (ORCID: https://orcid.org/0000-0002-4847-4892)
- Jianxun Liu (ORCID: https://orcid.org/0000-0001-8485-166X)
- Yu Qi
- Hui Yang (ORCID: https://orcid.org/0000-0003-0999-1595)
Institutions
- University of Science and Technology of China (CN)
- Chinese Academy of Sciences (CN)
- Suzhou Institute of Nano-tech and Nano-bionics (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-02-10
- DOI
- https://doi.org/10.1063/5.0256418
- Citations
- 4
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 5.03
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Jiangsu Province
- Youth Innovation Promotion Association of the Chinese Academy of Sciences
- Bureau of International Cooperation, Chinese Academy of Sciences
- Jiangsu Provincial Key Research and Development Program
- National Key Research and Development Program of China
- Science and Technology Program of Suzhou
- Basic and Applied Basic Research Foundation of Guangdong Province