Low-frequency noise and DC I–V characterization of gamma-ray irradiation-induced degradation and trap behaviors in a-IGZO TFTs

This work reports the impact of gamma-ray (γ-ray) irradiation-induced degradation based on the trap behaviors in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. By employing multiple measurement configurations via low-frequency noise and direct current I–V characterization, we quantitatively investigated the energetic distribution of subgap density-of-states in the a-IGZO channel and the spatial distribution of oxide traps (Not) in the gate insulator, respectively. Also, the qualitative analysis was performed to determine the oxygen-related defects after γ-ray irradiation using x-ray photoelectron spectroscopy. Furthermore, the validity of our results was additionally confirmed by measuring the breakdown voltage and applying positive-bias stress to the fabricated devices exposed to radiation for accelerated tests.

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Publication Details

Journal
Applied Physics Letters
Published
2025-02-10
DOI
https://doi.org/10.1063/5.0238211
Citations
2
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
1.46

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Low-frequency noise and DC I–V characterization of gamma-ray irradiation-induced degradation and trap behaviors in a-IGZO TFTs

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2 citations
Applied Physics Letters
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article

Low-frequency noise and DC I–V characterization of gamma-ray irradiation-induced degradation and trap behaviors in a-IGZO TFTs

Taehwan Moon, Jin‐Ha Hwang, Hagyoul Bae, Keun Heo, Bhishma Pandit, Youn‐Kyoung Lee, Kiyoung Lee, Seongbin Lim, Soon Joo Yoon, Binhyeong Lee, Jae‐Hyoung Yoo, Hyeonjun Song, Soyeon Kim, Hongseung Lee, Sojin Jung, S H Park, Jo Hak Jeong, Seohyeon Park
article en
2 citations

Abstract

This work reports the impact of gamma-ray (γ-ray) irradiation-induced degradation based on the trap behaviors in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. By employing multiple measurement configurations via low-frequency noise and direct current I–V characterization, we quantitatively investigated the energetic distribution of subgap density-of-states in the a-IGZO channel and the spatial distribution of oxide traps (Not) in the gate insulator, respectively. Also, the qualitative analysis was performed to determine the oxygen-related defects after γ-ray irradiation using x-ray photoelectron spectroscopy. Furthermore, the validity of our results was additionally confirmed by measuring the breakdown voltage and applying positive-bias stress to the fabricated devices exposed to radiation for accelerated tests.

Applied Physics LettersVol. 126(6)
Ajou University (KR), Jeonbuk National University (KR), Hongik University (KR)
National Research Foundation of Korea, Ministry of Science and ICT, South Korea
Openalex Percentile: Top 19%
Thin-Film Transistor Technologies
1.46
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