Pressure-induced metallization and semiconductor PN transition in InAs
Employing a diamond anvil cell, we measured resistivity and the Hall effect of InAs under pressures of 25 GPa, identifying key structural and electronic phase transitions at 3.8, 7.2, 10.3, and 14.7 GPa. The resistivity minima at 7.2 and 14.7 GPa coincide with structural shifts, while changes between 3.8 and 10.3 GPa indicate electronic transitions, including metallization and semiconductor type inversion. First-principles calculations validate these observations, highlighting the role of pressure in tailoring semiconductor properties, with implications for developing high-performance devices.
Authors
- Yushi Gu (ORCID: https://orcid.org/0000-0003-0620-0364)
- Baojia Wu (ORCID: https://orcid.org/0000-0001-8888-1460)
- Guang-Rui Gu
- Yonghao Han (ORCID: https://orcid.org/0000-0001-6835-5148)
- Hong‐Guang Piao (ORCID: https://orcid.org/0000-0001-5948-4327)
- Lianhua Tian (ORCID: https://orcid.org/0000-0002-1449-8562)
- Yang Gao (ORCID: https://orcid.org/0000-0002-7910-3787)
- Teng Zhuang
Institutions
- Yanbian University (CN)
- Jilin University (CN)
- FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ)
Publication Details
- Journal
- AIP Advances
- Published
- 2025-02-01
- DOI
- https://doi.org/10.1063/5.0252591
- Citations
- 3
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 3.74
Funders
- Natural Science Foundation of Jilin Province
- National Natural Science Foundation of China