Phase‐Coherent Transport in GeSn Alloys on Si (Adv. Electron. Mater. 2/2025)
In article number 2300565, Prateek Kaul, Dan Buca, and co-workers perform magneto-transport measurements on Hall bar devices on the novel alloy system GeSn grown on a Si wafer. The measurements reveal robust phase-coherent transport in high Sn concentrations with weak-localization effects and Shubnikov-de Haas oscillations (pictured). These are further used to extract coherence length, mobility and effective mass of Gamma-valley electrons in direct bandgap GeSn, setting forward a baseline for further experiments on the novel material system for its electronics, spintronics, and quantum computing applications.
Authors
- Omar Concepción (ORCID: https://orcid.org/0000-0001-8197-7523)
- Pankaj B. Kaul (ORCID: https://orcid.org/0009-0007-9036-3380)
- Z. Ikonić (ORCID: https://orcid.org/0000-0003-4645-377X)
- Daan H. Wielens (ORCID: https://orcid.org/0000-0002-2816-9671)
- Dan Buca (ORCID: https://orcid.org/0000-0002-3692-5596)
- Patrick Zellekens (ORCID: https://orcid.org/0000-0002-9986-8533)
- Qing‐Tai Zhao (ORCID: https://orcid.org/0000-0002-2794-2757)
- Koji Ishibashi (ORCID: https://orcid.org/0000-0001-8131-9969)
- Detlev Grützmacher (ORCID: https://orcid.org/0000-0001-6290-9672)
- Alexander Brinkman (ORCID: https://orcid.org/0000-0002-5406-2202)
- Chuan Li (ORCID: https://orcid.org/0000-0003-0004-1497)
Institutions
- University of Leeds (GB)
- Forschungszentrum Jülich (DE)
- NTT Basic Research Laboratories (JP)
- RIKEN Center for Emergent Matter Science (JP)
- University of Twente (NL)
Publication Details
- Journal
- Advanced Electronic Materials
- Published
- 2025-02-01
- DOI
- https://doi.org/10.1002/aelm.202570004
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00