Analysis of the Development of Silicon Gel Electrical Branches with Temperature Under Square Wave Pulsed Electric Field

Power semiconductor device is an important part of power electronic equipment. As the working conditions of semiconductor devices become more complex, their insulation packaging materials are more seriously challenged by high temperature. High temperature will lead to deterioration of insulation packaging materials and poor insulation performance. As silicon gel is a common packaging material for semiconductor devices, it is necessary to study the failure mechanism of silicon gel under high temperature and high pressure conditions. In this paper, the change of temperature during the development of electrical branches of silicon gel under the action of square wave pulse voltage is studied, and the mechanism of the tree voltage is explained, which provides a basis for improving the performance of insulating materials in the packaging of power semiconductor devices.