PADRE-Based Analysis to Identify the Effect of Gate Length on Subthreshold Swing and Drain Current of a FinFET Structure

Various novel electronic devices have been worked upon like Tunnel Field Effect Transistor, Double Gate Field Effect Transistors (DGFET), High Electron Mobility Transistor (HEMT), etc. FinFET as a device has also been in the fray to prove its worth, but a lot is still required to be explored to establish the utility of this device. In this research paper, we have studied the effect of variation of gate lengths less than 10 nm on various device properties like subthreshold swing (SS), <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{I}_{\text{on}}/\mathbf{I}_{\text{off}}$</tex> and drain current <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathbf{I}_{\mathbf{d}})$</tex> using PADRE software. A minimum SS value of 32 mV/dec has been obtained with source length value as 6 nm and gate length as 10 nm. The highest <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{I}_{\mathbf{on}} / \mathbf{I}_{\mathbf{off}}$</tex> ratio of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{8.55}\mathbf{x}\boldsymbol{10^{3}}$</tex> could be obtained which is quite close to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{9}\times \boldsymbol{10^{3}}$</tex> as recommended by International Technology Roadmap for Semiconductors (ITRS). Paper also presents results of the effect of gate length variation on the drain current. Overall, the obtained characteristics look to be promising for a modern-day electronic device.