Highly Linear Transformer-based Downconverter with Intermodulation Distortion Null

This paper presents a 2.4 GHz transformer-based downconverter with high linearity. An intermodulation distortion null technique is used to enhance the linearity. The downconverter is designed using the TSMC $0.18-\mu \mathrm{m}$ SiGe BiCMOS standard process. The supply voltage that is applied to the downconverter is 0.6 V and the power consumption is 0.33 mW. The simulated result shows that the input third-order intercept point $\left(I {I} P_{3}\right)$ increases by 8.67 dB.

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Publication Details

Published
2024-12-10
DOI
https://doi.org/10.1109/ispacs62486.2024.10868005
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Highly Linear Transformer-based Downconverter with Intermodulation Distortion Null

Jia‐Rong Chen, Jian‐Ming Wu, Kyung Heon Kuo, Jia-Xuan Wu
GaN-based semiconductor devices and materials
article

Highly Linear Transformer-based Downconverter with Intermodulation Distortion Null

Jia‐Rong Chen, Jian‐Ming Wu, Kyung Heon Kuo, Jia-Xuan Wu
article en

Abstract

This paper presents a 2.4 GHz transformer-based downconverter with high linearity. An intermodulation distortion null technique is used to enhance the linearity. The downconverter is designed using the TSMC $0.18-\mu \mathrm{m}$ SiGe BiCMOS standard process. The supply voltage that is applied to the downconverter is 0.6 V and the power consumption is 0.33 mW. The simulated result shows that the input third-order intercept point $\left(I {I} P_{3}\right)$ increases by 8.67 dB.

National Kaohsiung Normal University (TW)
Openalex Percentile: Top 84%
GaN-based semiconductor devices and materials
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