All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates

In this work, we report on the fabrication of all-implanted β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) devices on semi-insulating (-201) β-Ga2O3 substrates. Through the use of multiple energy Si+ implantation and subsequent annealing, we were able to achieve high activation efficiencies up to 87% allowing to realize the active transistor channel and Ohmic contact regions with electrical properties comparable to homoepitaxial layers grown by metal-organic chemical vapor deposition. The fabricated β-Ga2O3 MOSFET devices featured excellent current modulation with on/off current ratios up to 109, maximum drain current densities of 180 mA/mm, and specific on-resistances of 1.5 mΩcm2. Furthermore, breakdown measurements in air of the non-field-plated MOSFET devices with a gate-to-drain distance of 2 μm showed a catastrophic breakdown at 332 V, which equals an average breakdown strength of 1.7 MV/cm. The outcome of this work emphasizes the high potential of this all-implantation approach for fabricating high-performing Ga2O3-based electronic devices for next-generation power electronics applications without the need of sophisticated high-quality epitaxial growth.