Oxygen impurities in AlN and their impact on optical absorption

Oxygen is a common impurity in AlN samples. Using hybrid density functional calculations, we investigate the role of substitutional oxygen (ON) in the optical absorption. We construct configuration coordination diagrams for ON and related complexes. Our results indicate that an optical transition involving ON− (a DX center) gives rise to an absorption band peaked at 2.22 eV, suggesting it is a source of the absorption band with an onset at ∼ 2 eV observed in oxygen-containing samples. We also propose that neutral ON–DX complexes can form, which would give rise to absorption peaking at 3.06 eV. In addition, we find that oxygen, in spite of its DX character, may behave as an “optically shallow donor” and be involved in optical transitions from deep defect states to the conduction band. This observation provides an alternative physical mechanism for the optical absorption bands observed in AlN samples in the visible and ultraviolet (UV) region.

Authors

Institutions

Publication Details

Journal
Applied Physics Letters
Published
2025-02-10
DOI
https://doi.org/10.1063/5.0234655
Citations
12
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
15.10

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Oxygen impurities in AlN and their impact on optical absorption

Chris G. Van de Walle, John L. Lyons, Luke Gordon, Anderson Janotti et al.
12 citations
Applied Physics Letters
GaN-based semiconductor devices and materials
15.10
article

Oxygen impurities in AlN and their impact on optical absorption

Chris G. Van de Walle, John L. Lyons, Luke Gordon, Anderson Janotti, Qimin Yan
article en
12 citations

Abstract

Oxygen is a common impurity in AlN samples. Using hybrid density functional calculations, we investigate the role of substitutional oxygen (ON) in the optical absorption. We construct configuration coordination diagrams for ON and related complexes. Our results indicate that an optical transition involving ON− (a DX center) gives rise to an absorption band peaked at 2.22 eV, suggesting it is a source of the absorption band with an onset at ∼ 2 eV observed in oxygen-containing samples. We also propose that neutral ON–DX complexes can form, which would give rise to absorption peaking at 3.06 eV. In addition, we find that oxygen, in spite of its DX character, may behave as an “optically shallow donor” and be involved in optical transitions from deep defect states to the conduction band. This observation provides an alternative physical mechanism for the optical absorption bands observed in AlN samples in the visible and ultraviolet (UV) region.

Applied Physics LettersVol. 126(6)
United States Naval Research Laboratory (US), Northeastern University (US), University of California, Santa Barbara (US), University of Delaware (US)
National Science Foundation, U.S. Department of Energy, U.S. Naval Research Laboratory
Openalex Percentile: Top 1%
GaN-based semiconductor devices and materials
15.10
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.