All Ceramic Wideband Dielectric Patch Antenna Using Temperature‐Stable High‐Permittivity Ba <sub>4.5</sub> (Sm <sub>0.8</sub> La <sub>0.2</sub> ) <sub>9</sub> Ti <sub>18</sub> O <sub>54</sub> Microwave Dielectric Ceramic for 5G Applications

Driven by the demand of low profile, wide bandwidth, high gain, and high radiation efficiency, dielectric patch antenna (DPA) has become an important innovation for antenna technology due to its limitless potential for futuristic applications. This article discusses all ceramic wideband DPA using high permittivity temperature‐stable low‐loss Ba 4.5 (Sm 0.8 La 0.2 ) 9 Ti 18 O 54 (BSLT) microwave dielectric ceramic prepared by solid‐state reaction method at sintering temperature of 1380 °C. The fabricated ceramic has excellent microwave dielectric properties with permittivity ( ε r ) 90.0, high Q × f value ( Q = quality factor, f = resonant frequency) 8230 @ 3.54 GHz, and temperature coefficient of resonant frequency ( TCF ) +2.8 ppm °C −1 . The main characteristic of designed DPA is its unique structure and design, where both patch and ground plane are made up of high ε r , low loss, temperature‐stable microwave dielectric ceramic. Wideband performance is realized by using air substrate and disk‐loaded probe between ground and radiating patch. The fabricated DPA has wide bandwidth of 46.8% and measured realized gain of 6.5 dBi. Due to its excellent microwave properties and radiation performance, the proposed DPA is envisaged to have promising applications for 5G communication systems.

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Publication Details

Journal
Advanced Engineering Materials
Published
2025-02-07
DOI
https://doi.org/10.1002/adem.202402519
Citations
4
Primary Topic
Microwave Dielectric Ceramics Synthesis
Type
article
Field-Weighted Citation Impact
2.92

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article

All Ceramic Wideband Dielectric Patch Antenna Using Temperature‐Stable High‐Permittivity Ba 4.5 (Sm 0.8 La 0.2 ) 9 Ti 18 O 54 Microwave Dielectric Ceramic for 5G Applications

Muhammad Wasif Niaz, Yongqiang Pang, Haiyi Peng, Diming Xu et al.
4 citations
Advanced Engineering Materials
Microwave Dielectric Ceramics Synthesis
2.92
article

All Ceramic Wideband Dielectric Patch Antenna Using Temperature‐Stable High‐Permittivity Ba 4.5 (Sm 0.8 La 0.2 ) 9 Ti 18 O 54 Microwave Dielectric Ceramic for 5G Applications

Muhammad Wasif Niaz, Yongqiang Pang, Haiyi Peng, Diming Xu, Chao Du, Huixing Lin, Di Zhou, Muhammad Shehbaz, Song Xia, Zhongqi Shi, Xiaogang Yao
article en
4 citations

Abstract

Driven by the demand of low profile, wide bandwidth, high gain, and high radiation efficiency, dielectric patch antenna (DPA) has become an important innovation for antenna technology due to its limitless potential for futuristic applications. This article discusses all ceramic wideband DPA using high permittivity temperature‐stable low‐loss Ba 4.5 (Sm 0.8 La 0.2 ) 9 Ti 18 O 54 (BSLT) microwave dielectric ceramic prepared by solid‐state reaction method at sintering temperature of 1380 °C. The fabricated ceramic has excellent microwave dielectric properties with permittivity ( ε r ) 90.0, high Q × f value ( Q = quality factor, f = resonant frequency) 8230 @ 3.54 GHz, and temperature coefficient of resonant frequency ( TCF ) +2.8 ppm °C −1 . The main characteristic of designed DPA is its unique structure and design, where both patch and ground plane are made up of high ε r , low loss, temperature‐stable microwave dielectric ceramic. Wideband performance is realized by using air substrate and disk‐loaded probe between ground and radiating patch. The fabricated DPA has wide bandwidth of 46.8% and measured realized gain of 6.5 dBi. Due to its excellent microwave properties and radiation performance, the proposed DPA is envisaged to have promising applications for 5G communication systems.

Advanced Engineering MaterialsVol. 27(7)
Northwestern Polytechnical University (CN), Chinese Academy of Sciences (CN), Shanghai Institute of Ceramics (CN), Xi'an Jiaotong University (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 10%
Microwave Dielectric Ceramics Synthesis
2.92
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