Oxygen Vacancies Generated Out‐of‐Plane and In‐Plane Ferroelectricity in Layered Bi<sub>2</sub>WO<sub>6</sub> Nanoflake

Abstract Ferroelectricity in ultrathin 2D materials has garnered significant attention owing to its potential applications in nonvolatile memory, nanoelectronics, and optoelectronics. However, the exploration of ferroelectricity in materials possessing inherent centrosymmetric or mirror symmetry, particularly in the 2D domain, remains limited. In this study, the chemical vapor deposition (CVD) technique is utilized to synthesize ultrathin Bi 2 WO 6 (BWO) nanoflakes, revealing robustly intercorrelated out‐of‐plane (OOP) and in‐plane (IP) ferroelectric polarization. The measured ferroelectric phase transition temperature of ultrathin BWO nanoflake is ≈800 K. The emergence of OOP ferroelectricity in BWO nanoflake is ascribed to the displacement of oxygen vacancies between neighboring asymmetric sites, leading to the disruption of local structural mirror symmetry and the alignment of dipole moments. Moreover, the IP and OOP ferroelectric responses are modulated by distinct maximum bias voltages. This investigation offers novel insights into the advancement of 2D ferroelectrics with elevated Curie temperatures.

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Publication Details

Journal
Advanced Functional Materials
Published
2025-02-10
DOI
https://doi.org/10.1002/adfm.202419399
Citations
4
Primary Topic
Multiferroics and related materials
Type
article
Field-Weighted Citation Impact
1.71

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article

Oxygen Vacancies Generated Out‐of‐Plane and In‐Plane Ferroelectricity in Layered Bi2WO6 Nanoflake

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4 citations
Advanced Functional Materials
Multiferroics and related materials
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article

Oxygen Vacancies Generated Out‐of‐Plane and In‐Plane Ferroelectricity in Layered Bi2WO6 Nanoflake

Xiaohang Pan, Lingling Xu, Lixing Kang, Alei Li, Mengjiao Han, Yunlei Zhong, Qing Guo, Hui Zhang, Zhen Zhang, Yong Zhang, Xu Zhang, Yunfei Li, Xiuliang Ma, Yujia Wang, Pin Zhao, Lin Wang
article en
4 citations

Abstract

Abstract Ferroelectricity in ultrathin 2D materials has garnered significant attention owing to its potential applications in nonvolatile memory, nanoelectronics, and optoelectronics. However, the exploration of ferroelectricity in materials possessing inherent centrosymmetric or mirror symmetry, particularly in the 2D domain, remains limited. In this study, the chemical vapor deposition (CVD) technique is utilized to synthesize ultrathin Bi 2 WO 6 (BWO) nanoflakes, revealing robustly intercorrelated out‐of‐plane (OOP) and in‐plane (IP) ferroelectric polarization. The measured ferroelectric phase transition temperature of ultrathin BWO nanoflake is ≈800 K. The emergence of OOP ferroelectricity in BWO nanoflake is ascribed to the displacement of oxygen vacancies between neighboring asymmetric sites, leading to the disruption of local structural mirror symmetry and the alignment of dipole moments. Moreover, the IP and OOP ferroelectric responses are modulated by distinct maximum bias voltages. This investigation offers novel insights into the advancement of 2D ferroelectrics with elevated Curie temperatures.

Advanced Functional MaterialsVol. 35(27)
Chinese Academy of Sciences (CN), Suzhou Institute of Nano-tech and Nano-bionics (CN), Songshan Lake Materials Laboratory (CN), Institute of Physics (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation
Openalex Percentile: Top 17%
Multiferroics and related materials
1.71
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