Large-photosensitive-area InGaAs(P) near-infrared single-photon detector with a low dark-count rate at 203 K

<h2>Summary</h2> In order to increase the detection field of view and efficiency in practical systems such as lidar, two large-area, high-efficiency, near-infrared single-photon detectors (SPDs) with low dark-count rates (DCRs) have been developed, utilizing InGaAs(P) single-photon avalanche diodes (SPADs). A specialized chamber structure is designed and thoroughly analyzed to enable deep cooling of the SPADs, which effectively reduce false counts. In addition, a low-power, high-speed quenching circuit is implemented to mitigate the afterpulsing effect. With a 50 μm InGaAs SPAD, the shortest dead time of 40 ns, DCR of 1.3 kHz, and afterpulse probability of 11.7% are obtained at 8% photon detection efficiency (PDE), 1,550 nm, and 203 K, and the maximum PDE is 26%. For the 80 μm InGaAsP SPAD, the shortest dead time, DCR, and afterpulse probability values of 45 ns, 18 Hz, and 9.8%, respectively, are recorded at a PDE of 10%, 1,064 nm, and 203 K, and the maximum PDE can reach 35%.