Comprehensive Analysis of Si and SiC MOSFETs in Half-Bridge Configuration for High-Frequency Power Converters

This paper aims to study and compare the behavior of Silicon (Si) and Silicon Carbide (SiC) MOSFETs, with a focus on analyzing their switching and conduction losses. Through both simulation and hardware-based experiments, the goal is to evaluate the performance of these two MOSFET types using the Double Pulse Test (DPT). The study computes and compares turn-on and turn-off energy losses, revealing that SiC MOSFETs achieve a 97.76% reduction in switching losses compared to Si MOSFETs, while also demonstrating lower conduction losses. A buck converter is used to simulate high-frequency operation, further showcasing SiC MOSFETs' superior efficiency in power conversion applications. These findings emphasize the potential of SiC MOSFETs to drive advancements in energy-efficient, high-density power systems, making them an optimal choice for next-generation sustainable power electronics.