Enhancing Optical Sensitivity in DG-JL Transistor Through Gaussian Doping Technique

This work mainly discusses the variability in the optical sensitivity of Double Gate JunctionLess Transistor (DG-JL T) due to the change in the doping concentration (i.e. uniform and Gaussian doping profile) which may alter during the fabrication thus, leading to the variation in the device sensitivity. ATLAS TCAD software has been employed to present the influence of the doping profile. The presented results show significant improvement in terms of optical sensitivity using a Gaussian doped channel i.e. from 5xl06 (uniform doping) to 3xl09 (when the peak of the Gaussian doping is at the top of the channel) caused by the lower OFF-state current (IOFF) under the dark condition. The sensitivity variation with the angle of the incidence light has also been examined for uniform and Gaussian-doped devices. The calculated deterioration in terms of optical sensitivity is lower (69<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">%</sup>) in the Gaussian channel device with the peak at the top surface compared to uniformly doped (76%) DG-JL MOSFET. The presence of interface charges also modulates the sensitivity of the device due to the variation in the recombination rate. It is observed that the calculated sensitivity deteriorated with positive interface changes and increased for negative interface charges. However, a reverse trend has been observed in delay time i.e. increases for negative interface changes due to a low recombination rate.