An Approximate Method for The Fault Tolerance of SRAM-Based Near-Memory Multiply-Accumulate Units
To address the von Neumann bottleneck, computing-in-memory is emerging as a prominent trend. While numerous studies have explored SRAM-based near-memory multiply-accumulate unit (MAC) design in recent years, they often overlook fault-tolerance techniques. In this paper, we propose integrating an approximate method into near-memory MAC circuits to prevent chips from becoming unusable due to a few faulty memory cells. If a memory cell responsible for calculating the most-significant-bit (MSB) fails, we reallocate the memory cell originally designated for calculating the least-significant-bit (LSB) to compute the MSB instead, thus minimizing computation errors. Experimental results demonstrate that the proposed approximate fault-tolerance mechanism incurs only a small additional area overhead but significantly reduces errors caused by memory cell faults.
Authors
- Yung‐Chieh Lin (ORCID: https://orcid.org/0000-0002-7698-8428)
- Shih-Hsu Huang (ORCID: https://orcid.org/0000-0001-8908-8384)
- Liang-Ying Su (ORCID: https://orcid.org/0009-0003-8233-939X)
Institutions
- Chung Yuan Christian University (TW)
Publication Details
- Published
- 2024-12-10
- DOI
- https://doi.org/10.1109/ispacs62486.2024.10867960
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science and Technology Council