An Approximate Method for The Fault Tolerance of SRAM-Based Near-Memory Multiply-Accumulate Units

To address the von Neumann bottleneck, computing-in-memory is emerging as a prominent trend. While numerous studies have explored SRAM-based near-memory multiply-accumulate unit (MAC) design in recent years, they often overlook fault-tolerance techniques. In this paper, we propose integrating an approximate method into near-memory MAC circuits to prevent chips from becoming unusable due to a few faulty memory cells. If a memory cell responsible for calculating the most-significant-bit (MSB) fails, we reallocate the memory cell originally designated for calculating the least-significant-bit (LSB) to compute the MSB instead, thus minimizing computation errors. Experimental results demonstrate that the proposed approximate fault-tolerance mechanism incurs only a small additional area overhead but significantly reduces errors caused by memory cell faults.

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Published
2024-12-10
DOI
https://doi.org/10.1109/ispacs62486.2024.10867960
Primary Topic
Radiation Effects in Electronics
Type
article
Field-Weighted Citation Impact
0.00

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article

An Approximate Method for The Fault Tolerance of SRAM-Based Near-Memory Multiply-Accumulate Units

Yung‐Chieh Lin, Shih-Hsu Huang, Liang-Ying Su
Radiation Effects in Electronics
article

An Approximate Method for The Fault Tolerance of SRAM-Based Near-Memory Multiply-Accumulate Units

Yung‐Chieh Lin, Shih-Hsu Huang, Liang-Ying Su
article en

Abstract

To address the von Neumann bottleneck, computing-in-memory is emerging as a prominent trend. While numerous studies have explored SRAM-based near-memory multiply-accumulate unit (MAC) design in recent years, they often overlook fault-tolerance techniques. In this paper, we propose integrating an approximate method into near-memory MAC circuits to prevent chips from becoming unusable due to a few faulty memory cells. If a memory cell responsible for calculating the most-significant-bit (MSB) fails, we reallocate the memory cell originally designated for calculating the least-significant-bit (LSB) to compute the MSB instead, thus minimizing computation errors. Experimental results demonstrate that the proposed approximate fault-tolerance mechanism incurs only a small additional area overhead but significantly reduces errors caused by memory cell faults.

Chung Yuan Christian University (TW)
National Science and Technology Council
Climate action
Openalex Percentile: Top 75%
Radiation Effects in Electronics
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