Exploring Radiation Effect on GP-SOI MOSFET Performance and Reliability

This paper evaluates the radiation-induced Single Event Upset (SEU) effects on Fully Depleted SOI having Ground Plane (a strongly doped p-type silicon layer) (FD-SOI-GP) MOSFET using the Victory TCAD and compares the same with the conventional FD-SOI MOSFET. The presented Ground plane in FD-SOI-GP-MOSFET significantly reduces the observed Short Channel Effects (SCEs) regarding DIBL and leakage current. The simulation study compares the device's properties by examining the sensitivity of the devices at different energies of the Heavy-ions and device parameter values. According to the results that have been provided, the addition of the Ground Plane to the oxide layer effectively boosts the device's sensitivity against Heavy-ion radiation. The position and angle of the incident ions have also been changed during the investigation to explore the device's reliability against radiation. Additionally, the depth and doping of the GP have been varied to examine its influence on the sensitivity of the device.