Fabrication of n-type and p-type WSe₂ field-effect transistors and their low-voltage CMOS inverter operation

Abstract This paper describes the concepts for achieving n-type and p-type WSe 2 field-effect transistors (FETs) and their complementary metal-oxide-semiconductor (CMOS) inverter operation. First, n-type and p-type WSe 2 FETs were demonstrated using molecular chemistry approaches that offer the manipulation of WSe 2 properties through low-temperature, low-energy processes. Next, the advancement in device technology was explained to achieve symmetric characteristics in n-type and p-type WSe 2 FETs. WSe 2 single-channel CMOS offers a promising pathway for simplifying device integration to suppress variability and fluctuations in FET characteristics, although many challenges remain to be addressed. Further fundamental research holds the potential to advance the development of WSe 2 single-channel CMOS devices.