Influence of the Annealing Temperature on the Properties of {ZnO/CdO}30 Superlattices Deposited on c-Plane Al2O3 Substrate by MBE

{CdO/ZnO}m superlattices (SLs) have been grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PA-MBE). The observation of satellite peaks in the XRD studies of the as-grown and annealed samples confirms the presence of a periodic superlattice structure. The properties of as-grown and annealed SLs deposited on c-oriented sapphire were investigated by transmission electron microscopy, X-ray diffraction and temperature dependent PL studies. The deformation of the SLs structure was observed after rapid thermal annealing. As the thermal annealing temperature increases, the diffusion of Cd ions from the quantum well layers into the ZnO barrier increases. The formation of CdZnO layers causes changes in the luminescence spectrum in the form of peak shifts, broadening and changes in the spacing of the satellite peaks visible in X-ray analysis.