Unraveling the Nanosecond Photoresponse of Layered HgPSe<sub>3</sub>

Chalcogen phosphates of transition metals make up a well-known group of antiferromagnetic semiconductors with the general formula MPX<sub>3</sub>, where M represents a transition metal and X is a chalcogen, either sulfur or selenium. Most of these compounds adopt a similar structure; however, mercury phosphochalcogenides present an exception with their unique van der Waals layered structure. Transition metal chalcogenides are highly appealing materials for photodetectors due to their exceptional optoelectronic properties. Among them, HgPSe<sub>3</sub>, a layered van der Waals phosphoselenide, shows promise for photodetection over a broad spectral range, from visible light to X-rays. Despite this, the electronic processes governing its photoresponse remain unclear. In this study, we demonstrate a nanosecond response time of a HgPSe<sub>3</sub>-based photodetector to visible light and gain deeper insights into the underlying charge carrier dynamics through a comprehensive investigation using complementary time-resolved experimental techniques. Our findings on the role of carrier traps provide a potential pathway for optimizing optoelectronic device performance.

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Publication Details

Journal
Nano Letters
Published
2025-02-11
DOI
https://doi.org/10.1021/acs.nanolett.4c04945
Citations
2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.04

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article

Unraveling the Nanosecond Photoresponse of Layered HgPSe3

B. Simoni, Nikolas Antonatos, R. Kudrawiec, Christoph Gadermaier et al.
2 citations
Nano Letters
2D Materials and Applications
1.04
article

Unraveling the Nanosecond Photoresponse of Layered HgPSe3

B. Simoni, Nikolas Antonatos, R. Kudrawiec, Christoph Gadermaier, Antonella Treglia, Karolina Ciesiołkiewicz, E. Belas, M. Betušiak, Annamaria Petrozza, Alessandro Baserga, Giulio Cerullo, M. Bertolotti, Valentino Jadriško, Kalyan Jyoti Sarkar, Stefano Dal Conte, Zdeněk Sofer, R. Grill, David Sedmidubský, Artur P. Herman, Amutha Subramani
article en
2 citations

Abstract

Chalcogen phosphates of transition metals make up a well-known group of antiferromagnetic semiconductors with the general formula MPX<sub>3</sub>, where M represents a transition metal and X is a chalcogen, either sulfur or selenium. Most of these compounds adopt a similar structure; however, mercury phosphochalcogenides present an exception with their unique van der Waals layered structure. Transition metal chalcogenides are highly appealing materials for photodetectors due to their exceptional optoelectronic properties. Among them, HgPSe<sub>3</sub>, a layered van der Waals phosphoselenide, shows promise for photodetection over a broad spectral range, from visible light to X-rays. Despite this, the electronic processes governing its photoresponse remain unclear. In this study, we demonstrate a nanosecond response time of a HgPSe<sub>3</sub>-based photodetector to visible light and gain deeper insights into the underlying charge carrier dynamics through a comprehensive investigation using complementary time-resolved experimental techniques. Our findings on the role of carrier traps provide a potential pathway for optimizing optoelectronic device performance.

Nano LettersVol. 25(8)
Wrocław University of Science and Technology (PL), Charles University (CZ), Italian Institute of Technology (IT), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), Center for Nano Science and Technology (IT), AGH University of Krakow (PL), University of Chemistry and Technology, Prague (CZ), Politecnico di Milano (IT)
Univerzita Karlova v Praze, European Commission, Ministerstvo Školství, Mládeže a Tělovýchovy, Grantová Agentura České Republiky, Narodowe Centrum Nauki, Horizon 2020 Framework Programme, HORIZON EUROPE Framework Programme, H2020 Marie Skłodowska-Curie Actions
Openalex Percentile: Top 28%
2D Materials and Applications
1.04
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