Optimized dual-band amplified spontaneous emission properties of PFO and BUBD-1 blend films based on TADF materials

Dual-band amplified spontaneous emission (DB-ASE) can serve as an effective spectral analysis technique for the detection of specific chemical or biological molecules. In this study, thermally activated delayed fluorescence (TADF) materials were employed to improve the DB-ASE performance of the PFO: BUBD-1 system and the optoelectronic properties of the corresponding organic light-emitting diodes (OLEDs). Due to the reverse intersystem crossing (RISC) effect and Förster energy transfer (FRET) in the TADF material DPAC-PPM, the ASE threshold of blend films decreased from 12.29 ± 0.49 to 3.78 ± 0.28μJ/pulse (460 nm) and from 12.69 ± 0.51 to 3.83 ± 0.28 μJ/pulse (490 nm). Moreover, OLEDs incorporating TADF materials in the emission layer exhibited improved performance. The energy transfer analysis revealed that the singlet (both prompt and delayed) energy of TADF material can be transferred to both PFO and BUBD-1, promoting fluorescence and thereby enhancing both DB-ASE and OLED performance. The incorporation of TADF materials in the emission layer offers a promising pathway toward the development of organic semiconductor lasers.