III-nitride HEMT Heterostructures with Ultrathin AlN Barrier: Obtaining and Experimental Application
The MBE-method with plasma activation of nitrogen is used to obtain III-nitride HEMT heterostructures containing an ultrathin AlN barrier. The influence of the nucleation and buffer layer growth modes on the crystalline quality, surface morphology, and electrophysical properties of experimental HS samples is studied. The sheet resistance of the optimized HS is less than 230 Ω/□. Test microwave transistors with Schottky gate are manufactured. The parametric model of the HEMT based on an AlN/GaN HS is proposed.
Authors
- A. O. Sultanov
- Р. В. Рыжук (ORCID: https://orcid.org/0000-0002-3827-1311)
- А. С. Гусев (ORCID: https://orcid.org/0000-0003-1761-4941)
- D. Tsunvaza (ORCID: https://orcid.org/0009-0003-7897-8367)
- Н. И. Каргин
- Г. К. Сафаралиев
- T. N. Nevolina
Institutions
- National Research Nuclear University MEPhI (RU)
Publication Details
- Journal
- Russian Microelectronics
- Published
- 2024-12-01
- DOI
- https://doi.org/10.1134/s1063739724600857
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.31