Influence of Manufacturing Defects and Electrical Noise on the Evolution of an Optically Controlled Charge Qubit
We consider semiconductor charge qubits based on a double quantum dot, placed in an optical resonator—a defect in a photonic crystal (PhC), taking into account deviations of their parameters from the specified ones. The influence of a topological disorder in the structure of a PhC on the spectrum of a resonator and the effect of a stochastic field of external charges on the state of a qubit are analyzed. M-ethods for weakening these effects when controlling a qubit and ways to optimize the storage of its state are indicated.
Authors
- I. Yu. Kateev
- A. V. Tsukanov (ORCID: https://orcid.org/0000-0001-7906-6069)
Institutions
- Moscow Institute of Physics and Technology (RU)
- Institute of Physics and Technology (RU)
Publication Details
- Journal
- Russian Microelectronics
- Published
- 2024-12-01
- DOI
- https://doi.org/10.1134/s1063739724600869
- Citations
- 1
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.34