Influence of Manufacturing Defects and Electrical Noise on the Evolution of an Optically Controlled Charge Qubit

We consider semiconductor charge qubits based on a double quantum dot, placed in an optical resonator—a defect in a photonic crystal (PhC), taking into account deviations of their parameters from the specified ones. The influence of a topological disorder in the structure of a PhC on the spectrum of a resonator and the effect of a stochastic field of external charges on the state of a qubit are analyzed. M-ethods for weakening these effects when controlling a qubit and ways to optimize the storage of its state are indicated.

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Publication Details

Journal
Russian Microelectronics
Published
2024-12-01
DOI
https://doi.org/10.1134/s1063739724600869
Citations
1
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
0.34
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article

Influence of Manufacturing Defects and Electrical Noise on the Evolution of an Optically Controlled Charge Qubit

I. Yu. Kateev, A. V. Tsukanov
1 citations
Russian Microelectronics
Semiconductor Quantum Structures and Devices
0.34
article

Influence of Manufacturing Defects and Electrical Noise on the Evolution of an Optically Controlled Charge Qubit

I. Yu. Kateev, A. V. Tsukanov
article en
1 citations

Abstract

We consider semiconductor charge qubits based on a double quantum dot, placed in an optical resonator—a defect in a photonic crystal (PhC), taking into account deviations of their parameters from the specified ones. The influence of a topological disorder in the structure of a PhC on the spectrum of a resonator and the effect of a stochastic field of external charges on the state of a qubit are analyzed. M-ethods for weakening these effects when controlling a qubit and ways to optimize the storage of its state are indicated.

Russian MicroelectronicsVol. 53(6)
Moscow Institute of Physics and Technology (RU), Institute of Physics and Technology (RU)
Affordable and clean energy
Openalex Percentile: Top 37%
Semiconductor Quantum Structures and Devices
0.34
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