Design and Manufacturing Features of a Three-Dimensional Microsystem with Side Commutations

Three-dimensional microassemblies with side commutation are promising for industrial and aerospace electronics applications due to their high density of vertical connections and their environmental durability. However, in the design of such three-dimensional structures, there are problems associated with designating in ECAD the vertical traces and the separable test part, as well as specifying the location of components within the assembly. In fabrication, the problems are related to processes and materials for sealing three-dimensional modules, level alignment, vertical commutation alignment with the side contacts, and side metallization formation. In this study, two types of microassemblies with side commutation are considered. In the field of design, solutions for the use of the standard ECAD tools to designate nonstandard structures are given. In the field of technology, the methods and materials of assemblies sealing are considered, and the results of studying the thermal coefficient of linear expansion of these materials by the dilatometry method are given. The approaches to aligning the levels and forming vertical traces with a width and gap of 50 μm by the laser ablation of the deposited metal from the surface of the sealing compound are indicated.

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Publication Details

Journal
Russian Microelectronics
Published
2024-12-01
DOI
https://doi.org/10.1134/s106373972470080x
Citations
1
Primary Topic
3D IC and TSV technologies
Type
article
Field-Weighted Citation Impact
0.21
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article

Design and Manufacturing Features of a Three-Dimensional Microsystem with Side Commutations

Mikhail D. Kochergin, С. П. Тимошенков, D. V. Vertyanov, I. A. Belyakov
1 citations
Russian Microelectronics
3D IC and TSV technologies
0.21
article

Design and Manufacturing Features of a Three-Dimensional Microsystem with Side Commutations

Mikhail D. Kochergin, С. П. Тимошенков, D. V. Vertyanov, I. A. Belyakov
article en
1 citations

Abstract

Three-dimensional microassemblies with side commutation are promising for industrial and aerospace electronics applications due to their high density of vertical connections and their environmental durability. However, in the design of such three-dimensional structures, there are problems associated with designating in ECAD the vertical traces and the separable test part, as well as specifying the location of components within the assembly. In fabrication, the problems are related to processes and materials for sealing three-dimensional modules, level alignment, vertical commutation alignment with the side contacts, and side metallization formation. In this study, two types of microassemblies with side commutation are considered. In the field of design, solutions for the use of the standard ECAD tools to designate nonstandard structures are given. In the field of technology, the methods and materials of assemblies sealing are considered, and the results of studying the thermal coefficient of linear expansion of these materials by the dilatometry method are given. The approaches to aligning the levels and forming vertical traces with a width and gap of 50 μm by the laser ablation of the deposited metal from the surface of the sealing compound are indicated.

Russian MicroelectronicsVol. 53(7)
National Research University of Electronic Technology (RU)
Openalex Percentile: Top 44%
3D IC and TSV technologies
0.21
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