Controlling structural phases of Sn through lattice engineering

Tin (Sn) stands out as a key quantum material due to its dual phases: $\ensuremath{\alpha}$-Sn, with topological properties, and $\ensuremath{\beta}$-Sn, a superconductor. By precise tuning of the buffer layer lattice constant from 6.10 \AA{} to 6.48 \AA{} using molecular beam epitaxy, the authors achieve precise controlled growth of phase-pure Sn films. The experimental results, validated by theory, demonstrate unprecedented phase control over $\ensuremath{\alpha}$-Sn and $\ensuremath{\beta}$-Sn. This work establishes a versatile platform for exploring topological phenomena and developing next-generation Sn-based quantum devices, unlocking possibilities in quantum materials and semiconductor technologies.

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Publication Details

Journal
Physical Review Materials
Published
2025-02-10
DOI
https://doi.org/10.1103/physrevmaterials.9.024202
Citations
2
Primary Topic
Surface and Thin Film Phenomena
Type
article
Field-Weighted Citation Impact
2.49

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article

Controlling structural phases of Sn through lattice engineering

Heesuk Rho, Pradip Adhikari, Anjali Rathore, Mina Yoon et al.
2 citations
Physical Review Materials
Surface and Thin Film Phenomena
2.49
article

Controlling structural phases of Sn through lattice engineering

Heesuk Rho, Pradip Adhikari, Anjali Rathore, Mina Yoon, Garrett Baucom, D.U Lee, Hong Seok Lee, Matthew Brahlek, Hyung Kook Choi, Taegeon Lee, Anuradha Wijesinghe, Honggyu Kim, Eitan Hershkovitz, An‐Hsi Chen, Sinchul Yeom, Joon Sue Lee, Hyunsoo Kim, Chandima Kasun Edirisinghe
article en
2 citations

Abstract

Tin (Sn) stands out as a key quantum material due to its dual phases: $\ensuremath{\alpha}$-Sn, with topological properties, and $\ensuremath{\beta}$-Sn, a superconductor. By precise tuning of the buffer layer lattice constant from 6.10 \AA{} to 6.48 \AA{} using molecular beam epitaxy, the authors achieve precise controlled growth of phase-pure Sn films. The experimental results, validated by theory, demonstrate unprecedented phase control over $\ensuremath{\alpha}$-Sn and $\ensuremath{\beta}$-Sn. This work establishes a versatile platform for exploring topological phenomena and developing next-generation Sn-based quantum devices, unlocking possibilities in quantum materials and semiconductor technologies.

Physical Review MaterialsVol. 9(2)
Oak Ridge National Laboratory (US), Missouri University of Science and Technology (US), University of Florida (US), University of Tennessee at Knoxville (US), Jeonbuk National University (KR)
National Science Foundation, U.S. Department of Energy, University of Tennessee, National Energy Research Scientific Computing Center, National Research Foundation of Korea, National Science Foundation, United Arab Emirates, Oak Ridge National Laboratory
Openalex Percentile: Top 14%
Surface and Thin Film Phenomena
2.49
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