The Effect of the Substrate Doping on the Properties of Structure Ga₂O₃–ZnGeP₂

The influence of doping ZnGeP 2 (ZGP) crystals on the electrical and photoelectric characteristics of Ga 2 O 3 /ZGP structures is studied. Samples are obtained by radio frequency magnetron sputtering of a gallium oxide film onto polished ZGP plates, undoped and doped with Sn, Se, Pb, or Zn. It is shown that the structures on doped ZGP with Sn and Se have a less dark current than the structures in undoped ZGP. The structures exhibit a photovoltaic effect under the exposure of radiation in the UV range with λ = 254 nm and in the long‐wavelength range with λ = 808. To obtain solar‐blind structures, it is necessary to use ZGP:Sn crystals. To increase the sensitivity of the samples to long‐wavelength radiation, it is advisable to dope ZGP plates with Pb or Zn. The behavior of the electrical and photoelectric characteristics of the studied samples with the doping different impurities is not related to the parameters of ZGP but is most likely determined by the change in the properties of the Ga 2 O 3 /ZGP heterointerface as a result of doping.