Attention-enhanced conditional variational autoencoder integrating 3D plasma etching simulation for etching process optimization

Accurate prediction of etching profiles is essential for optimizing semiconductor manufacturing processes. In this work, we present a novel approach to etch process optimization using the EtchAttnCVAE model, which combines conditional variational autoencoders (CVAE) with the attention mechanism to improve the precision of profile predictions. By leveraging three-dimensional plasma etching simulations and real process data, our model captures intricate details of etching profiles, ensuring high structural fidelity under varying conditions. The EtchAttnCVAE model enhances both forward and inverse optimization capabilities. In forward prediction, it accurately generates etching profiles from process conditions, while in inverse optimization, it efficiently identifies optimal recipes from target profiles. This dual capability is part of a comprehensive workflow, which begins with a neural network-based surrogate model for rapid predictions, followed by inverse model calibration and process optimization. Our results demonstrate that the EtchAttnCVAE model significantly outperforms traditional methods by accelerating recipe generation and improving prediction accuracy, making it an ideal solution for smart manufacturing in the semiconductor industry.

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Publication Details

Journal
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Published
2025-02-07
DOI
https://doi.org/10.1116/6.0004166
Citations
1
Primary Topic
Advancements in Photolithography Techniques
Type
article
Field-Weighted Citation Impact
0.73

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article

Attention-enhanced conditional variational autoencoder integrating 3D plasma etching simulation for etching process optimization

Kun Ren, Dawei Gao, Dong Ni, J. D. Guo
1 citations
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Advancements in Photolithography Techniques
0.73
article

Attention-enhanced conditional variational autoencoder integrating 3D plasma etching simulation for etching process optimization

Kun Ren, Dawei Gao, Dong Ni, J. D. Guo
article en
1 citations

Abstract

Accurate prediction of etching profiles is essential for optimizing semiconductor manufacturing processes. In this work, we present a novel approach to etch process optimization using the EtchAttnCVAE model, which combines conditional variational autoencoders (CVAE) with the attention mechanism to improve the precision of profile predictions. By leveraging three-dimensional plasma etching simulations and real process data, our model captures intricate details of etching profiles, ensuring high structural fidelity under varying conditions. The EtchAttnCVAE model enhances both forward and inverse optimization capabilities. In forward prediction, it accurately generates etching profiles from process conditions, while in inverse optimization, it efficiently identifies optimal recipes from target profiles. This dual capability is part of a comprehensive workflow, which begins with a neural network-based surrogate model for rapid predictions, followed by inverse model calibration and process optimization. Our results demonstrate that the EtchAttnCVAE model significantly outperforms traditional methods by accelerating recipe generation and improving prediction accuracy, making it an ideal solution for smart manufacturing in the semiconductor industry.

Journal of Vacuum Science & Technology A Vacuum Surfaces and FilmsVol. 43(2)
Zhejiang University (CN)
National Key Research and Development Program of China
Openalex Percentile: Top 32%
Advancements in Photolithography Techniques
0.73
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