Enhanced Capacitive Memory Window by Improving Remnant Polarization in Ferroelectric Capacitors for Non-Destructive Read

The unique concept of a non-volatile capacitive memory window (CMW) in ferroelectric (FE) capacitors (FeCAP) allows for a non-destructive read operation (NDRO). NDRO decouples the read- from the write-endurance which is ideal for random access memory and compute-in-memory applications. However, the optimal strategy to further improve the CMW remains uncertain. In this work, we first identify potential pathways to improve the CMW by studying the dependence of the relative dielectric permittivity (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\epsilon _{\text {r}}$ </tex-math></inline-formula>) of a FE on the remnant polarization (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${P}_{\text {R}}$ </tex-math></inline-formula>) and coercive field (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E} _{\text {C}}$ </tex-math></inline-formula>). Results show that a FE stack having a higher <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${P}_{\text {R}}$ </tex-math></inline-formula> and/or a lower <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {C}}$ </tex-math></inline-formula> leads to an improved <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\epsilon _{\text {r}}$ </tex-math></inline-formula> and CMW for a given read-bias. Next, we experimentally demonstrate this and show that a trilayer FeCAP with an enhanced <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2{P}_{\text {R}}$ </tex-math></inline-formula> achieves a high CMW<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\epsilon }$ </tex-math></inline-formula> of ~20, which is ~1.5x higher than earlier best. Finally, we demonstrate a pulse-based NDRO confirming a robust 1.5x enhancement in CMW even after <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{11}}$ </tex-math></inline-formula> NDRO cycles.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2025-02-07
DOI
https://doi.org/10.1109/led.2025.3539834
Citations
2
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
1.46
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article

Enhanced Capacitive Memory Window by Improving Remnant Polarization in Ferroelectric Capacitors for Non-Destructive Read

M. Popovici, Shankha Mukherjee, Sergiu Clima, Francky Catthoor et al.
2 citations
IEEE Electron Device Letters
Advanced Memory and Neural Computing
1.46
article

Enhanced Capacitive Memory Window by Improving Remnant Polarization in Ferroelectric Capacitors for Non-Destructive Read

M. Popovici, Shankha Mukherjee, Sergiu Clima, Francky Catthoor, Jan Van Houdt, Shimeng Yu, Attilio Belmonte, Gouri Sankar Kar, Valeri Afanasiev, Yang Xiang, Jasper Bizindavyi, Gourab De
article en
2 citations

Abstract

The unique concept of a non-volatile capacitive memory window (CMW) in ferroelectric (FE) capacitors (FeCAP) allows for a non-destructive read operation (NDRO). NDRO decouples the read- from the write-endurance which is ideal for random access memory and compute-in-memory applications. However, the optimal strategy to further improve the CMW remains uncertain. In this work, we first identify potential pathways to improve the CMW by studying the dependence of the relative dielectric permittivity (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\epsilon _{\text {r}}$ </tex-math></inline-formula>) of a FE on the remnant polarization (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${P}_{\text {R}}$ </tex-math></inline-formula>) and coercive field (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E} _{\text {C}}$ </tex-math></inline-formula>). Results show that a FE stack having a higher <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${P}_{\text {R}}$ </tex-math></inline-formula> and/or a lower <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {C}}$ </tex-math></inline-formula> leads to an improved <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\epsilon _{\text {r}}$ </tex-math></inline-formula> and CMW for a given read-bias. Next, we experimentally demonstrate this and show that a trilayer FeCAP with an enhanced <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2{P}_{\text {R}}$ </tex-math></inline-formula> achieves a high CMW<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\epsilon }$ </tex-math></inline-formula> of ~20, which is ~1.5x higher than earlier best. Finally, we demonstrate a pulse-based NDRO confirming a robust 1.5x enhancement in CMW even after <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{11}}$ </tex-math></inline-formula> NDRO cycles.

IEEE Electron Device LettersVol. 46(4)
Georgia Institute of Technology (US), IMEC (BE)
Affordable and clean energy
Openalex Percentile: Top 20%
Advanced Memory and Neural Computing
1.46
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