Pulse Discrimination and Filtering of X-Ray Ti/Au TESs Using Principal Component Analysis

We develop X-ray transition-edge sensors (TESs) based on Ti/Au bilayers with Au absorber deposited on the center of TES. The thermal conductance after etching the silicon substrate underneath the TES sensor is reduced to 530 pW/K, only ∼10% that before etching, which agrees well with thermal simulation using COMSOL software. Principal component analysis is adopted to simultaneously discriminate the true pulse traces from the false ones and improve the signal-to-noise ratio by ∼20 dB. The obtained energy resolution is 102 eV at 5.9 keV for etched TES device. In addition, we perform complex impedance measurement to extract the parameters of thermal capacity, temperature and current sensitivity, which is very useful to understand the dynamics of TESs.

Authors

Institutions

Publication Details

Journal
IEEE Transactions on Applied Superconductivity
Published
2025-02-07
DOI
https://doi.org/10.1109/tasc.2025.3539603
Citations
2
Primary Topic
Semiconductor materials and interfaces
Type
article
Field-Weighted Citation Impact
2.49
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Pulse Discrimination and Filtering of X-Ray Ti/Au TESs Using Principal Component Analysis

Jiaqiang Zhong, Peizhan Li, Yuan Ren, Jing Li et al.
2 citations
IEEE Transactions on Applied Superconductivity
Semiconductor materials and interfaces
2.49
article

Pulse Discrimination and Filtering of X-Ray Ti/Au TESs Using Principal Component Analysis

Jiaqiang Zhong, Peizhan Li, Yuan Ren, Jing Li, Wen Zhang, Zheng Wang, Wei Miao, Qingxiao Ma, Sheng‐Cai Shi, Zhi-Fa Feng
article en
2 citations

Abstract

We develop X-ray transition-edge sensors (TESs) based on Ti/Au bilayers with Au absorber deposited on the center of TES. The thermal conductance after etching the silicon substrate underneath the TES sensor is reduced to 530 pW/K, only ∼10% that before etching, which agrees well with thermal simulation using COMSOL software. Principal component analysis is adopted to simultaneously discriminate the true pulse traces from the false ones and improve the signal-to-noise ratio by ∼20 dB. The obtained energy resolution is 102 eV at 5.9 keV for etched TES device. In addition, we perform complex impedance measurement to extract the parameters of thermal capacity, temperature and current sensitivity, which is very useful to understand the dynamics of TESs.

IEEE Transactions on Applied SuperconductivityVol. 35(5)
Purple Mountain Observatory (CN)
Reduced inequalities
Openalex Percentile: Top 14%
Semiconductor materials and interfaces
2.49
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.